By ATN Editorial Team
Summary: Infineon Technologies has introduced its first automotive-qualified gallium nitride (GaN) transistor family, the CoolGaN™ Automotive Transistor 100 V G1, marking a major step toward GaN adoption in vehicles. Qualified to AEC-Q101 standards, the new transistors target applications such as zone control, DC-DC converters, auxiliary systems, and Class D audio amplifiers. By supporting higher efficiency, reduced size, and lower system cost compared to silicon components, these devices are designed to meet the growing power demands of software-defined and electric vehicles. Infineon also plans to extend its GaN portfolio into high-voltage products for onboard chargers and traction inverters.
Key engineering takeaway: The 100 V CoolGaN™ transistors deliver high efficiency and power density in compact form factors, enabling more capable and energy-efficient 48 V power architectures for modern automotive systems.
Why it matters: As vehicles transition to higher-voltage and software-defined platforms, GaN power devices will be essential for improving energy efficiency, reducing system costs, and supporting next-generation vehicle features such as steer-by-wire and real-time chassis control.
Infineon Technologies AG is further advancing on its path to become a leading GaN powerhouse and bolstering its position as the world’s leader in automotive semiconductors by introducing its first gallium nitride (GaN) transistor family qualified to the Automotive Electronics Council (AEC) standard for automotive applications.
Infineon is launching the CoolGaN™ Automotive Transistor 100 V G1 family for production and has started supplying samples of its pre-production product range qualified for automotive applications in accordance with AEC-Q101, including high-voltage (HV) CoolGaN Automotive Transistors and bidirectional switches. This reinforces the commitment of Infineon to providing innovative solutions that meet the evolving needs of the automotive industry – from low-voltage infotainment systems addressed by the new 100 V GaN transistor to future HV product solutions in onboard chargers and traction inverters.
“Infineon will advance its world-leading position for semiconductor solutions in the automotive industry by bringing GaN power technology to the growing software-defined and electric vehicle market,” says Johannes Schoiswohl, Head of the GaN Business Line at Infineon. “Our 100 V GaN auto transistor solutions and the upcoming portfolio extension into the high-voltage range are an important milestone in the development of energy-efficient and reliable power transistors for automotive applications.”
Automotive features such as Advanced Driver Assistance Systems (ADAS), new climate control and infotainment systems require higher power and more efficient power conversion solutions while minimizing strain on the battery. Therefore, demand is growing for compact and efficient power supply solutions which are highly enabled by the semiconductor material gallium nitride. GaN power devices offer higher energy efficiency in a smaller form factor and lower system cost compared to traditional silicon-based components.
Particularly with the shift from 12 V to 48 V systems in software-defined vehicles, GaN- based power conversion systems allow for improved performance but also enable advanced features such as steer-by-wire and real-time chassis control, improving ride comfort and handling. Featuring high efficiency in space-saving size, Infineon’s new family of 100 V CoolGaN transistors is ideal for applications such as zone control & main DC-DC converters, high-performance auxiliary systems, and Class D Audio amplifiers.
Infineon will continuously extend its portfolio of GaN automotive-qualified semiconductor solutions that will further drive the adoption of GaN based solutions in automotive.
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