Nexperia And Aurobay To Evaluate GaN Power Semiconductors
Nexperia and Aurobay Technologies have agreed to evaluate GaN and silicon carbide devices for traction inverters, after Nexperia GaN parts were deployed in Aurobay’s integrated…
Read MoreNexperia and Aurobay Technologies have agreed to evaluate GaN and silicon carbide devices for traction inverters, after Nexperia GaN parts were deployed in Aurobay’s integrated…
Read MoreROHM has developed a 4th generation automotive 650V IGBT family reaching 1.55 V collector-emitter saturation voltage with a 7 µs short-circuit withstand time, for electric…
Read MoreFive projects have won £26.9 million from the UK Government's DRIVE35 Scale-up Fund, covering axial flux motor production, power electronics assembly, battery cell contacting systems…
Read MoreAudi's Győr plant has begun series production of the MEBeco, the electric drive for the Volkswagen Group's MEB+ platform, in a step up for in-house…
Read MoreTraction inverters explained: how SiC MOSFETs are replacing silicon IGBTs in 800-volt EV platforms, what the DC-link, gate driver and power module actually do, and…
Read MoreHyundai Mobis has unveiled a 160-kW in-house Power Electric system, slotting between its existing 250-kW high-performance unit and an in-development 120-kW model that is planned…
Read MoreThe HiPower 5.0 consortium is working on a 22 kW on-board charger with a total size of only four litres, using Infineon’s bidirectional GaN switches,…
Read MoreBorgWarner is developing a 800-volt integrated drive module (iDM) and a generator module with a dual inverter for a North American OEM.
Read MoreIvan Llaurado, Chief Revenue Officer at Diamfab explores diamond semiconductor technology in energy management for electric vehicles.
Read MoreWolfspeed introduces 1200 V silicon carbide six-pack power modules built on its Gen 4 SiC MOSFET technology.
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