By ATN Editorial Team
Summary: Nexperia and Aurobay Technologies have agreed to explore a collaboration on GaN power semiconductors and silicon carbide devices for electrified powertrains, building on Nexperia parts already running in an Aurobay power generation system for range extender applications.
Key engineering takeaway: The existing project put Nexperia GaN power semiconductors into a highly integrated power generation system, which the companies say showed gains in efficiency, system size and weight. The next phase widens the scope to traction inverters and power generation systems, with early-stage co-design and system-level optimisation rather than device supply alone.
Why it matters: Aurobay Technologies is a division of Horse Powertrain, the Renault and Geely joint venture, so this work sits close to production hybrid and range extender programmes rather than in pure research. The open engineering question for powertrain teams is where GaN power semiconductors displace silicon carbide, and at what blocking voltage and switching frequency the choice flips.
Joint evaluation of GaN and SiC technologies aims to unlock higher efficiency and more compact power electronics for automotive applications.
Nexperia today announced it will explore a strategic collaboration on advanced power semiconductor solutions for automotive applications with Aurobay Technologies, a division of Horse Powertrain Ltd. (a joint venture between Renault group and Geely). The collaboration aims to combine Nexperia’s expertise in gallium nitride (GaN) and silicon carbide (SiC) semiconductor technologies with Aurobay Technologies’ capabilities in powertrain system design and integration. Building on a successful existing collaboration, the companies aim to evaluate how closer cooperation across semiconductor development and powertrain integration can support the next generation of electrified and hybrid vehicle platforms.
The collaboration follows the successful deployment of Nexperia’s GaN devices in Aurobay Technologies’ highly integrated power generation system for range extender applications. The project demonstrated the potential of wide-bandgap semiconductor technologies to improve efficiency, reduce system size and weight, and enhance overall performance in demanding automotive environments.
GaN Power Semiconductors Move Towards Traction Inverters
Building on this foundation, Nexperia and Aurobay Technologies will assess opportunities to further optimize power electronics architectures for applications including traction inverters and power generation systems. By combining Nexperia’s WBG expertise with Aurobay Technologies’ experience and capabilities in powertrain systems, the companies intend to evaluate joint engineering approaches, including early-stage co-design and system-level optimization.
Why Wide-Bandgap Devices Matter For Powertrain Packaging
As vehicle manufacturers seek higher efficiency, greater power density and more compact powertrain architectures, wide-bandgap semiconductor technologies are becoming increasingly important enablers of electrification. Through this collaboration, Nexperia and Aurobay Technologies aim to explore new approaches that accelerate the adoption of advanced power semiconductor solutions and support the development of scalable, high-performance propulsion systems for future mobility.
GaN and SiC technologies offer significant opportunities to improve efficiency, power density and system performance in automotive applications. By working closely with Aurobay Technologies, we can better understand system-level requirements and evaluate how advanced semiconductor technologies can deliver measurable benefits at the vehicle level. We look forward to building on our successful collaboration and exploring new opportunities together.
Edoardo Merli, Head of Business Group Wide-Bandgap, IGBTs and Modules, Nexperia
Our experience integrating Nexperia’s GaN technology into a highly integrated power generation system demonstrated the potential of close collaboration across the value chain. By combining our expertise in powertrain systems with Nexperia’s semiconductor innovation, we can evaluate new approaches to improving efficiency, performance and packaging for future electrified propulsion systems.
Dr. Ma Yongquan, Chief Engineer, Advanced Engineering on Electrical Components, Aurobay Technologies
Frequently Asked Questions
What are GaN power semiconductors?
Gallium nitride power semiconductors are wide-bandgap switching devices used in place of silicon in power electronics. The wider bandgap lets them switch faster and with lower losses than silicon at the same voltage, which allows smaller magnetics and cooling hardware and therefore a more compact converter or inverter.
How do GaN and silicon carbide differ in automotive power electronics?
Both are wide-bandgap materials, but they occupy different parts of the voltage range in current automotive use. GaN devices are generally offered at lower blocking voltages and very high switching frequencies, which suits on-board chargers, DC-DC converters and generator-side power electronics. Silicon carbide is the established choice at the higher blocking voltages associated with 800 V traction systems. Nexperia and Aurobay Technologies say they will evaluate both across powertrain applications.
What have Nexperia and Aurobay Technologies already built together?
Nexperia GaN devices were deployed in an Aurobay Technologies highly integrated power generation system for range extender applications. Nexperia says the project demonstrated the potential of wide-bandgap technologies to improve efficiency and reduce system size and weight, and it is the foundation the wider collaboration builds on.
What is Aurobay Technologies?
Aurobay Technologies is a division of Horse Powertrain Ltd., the joint venture between Renault group and Geely. It brings together the powertrain legacy of Geely and Volvo Cars and operates 10 plants and 2 R&D centres in Europe and Asia, from Gothenburg and Hangzhou Bay.
Why does the switch material matter in a traction inverter?
The traction inverter converts the battery’s direct current into the alternating current the motor needs, and the switching devices set its efficiency, thermal load and physical size. Lower switching and conduction losses reduce the cooling requirement and allow higher switching frequencies, which in turn shrinks passive components. That is why the choice between silicon, silicon carbide and GaN is a system-level decision rather than a component swap.
Further Reading On Auto Tech News
- What Is A Traction Inverter? An EV Powertrain Engineer’s Guide
- Ricardo To Develop GaN Traction Inverters For New Nissan LEAF
- HiPower 5.0: 22 kW GaN On-Board Charger In 4 Litres
- Horse Powertrain Methanol Range Extender Uses Axial Flux Motor
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